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排名必读论文期刊顶会热点AI 简史溯源树小脉星探人才迁徙塔尖人才国防情报追踪开源工具智慧手语
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论文共 39 篇作者统计合作学者相似作者

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Modeling and Demonstration for Multi-level Weight Conductance in Computational FeFET Memory Cell
Won-Tae Koo,Jae-Gil Lee, Gunhee Lee, Woocheol Lee, Jungwook Woo,Dong Ik Suh, Joongsik Kim,Hyung Dong Lee, Seho Lee,Jaeyun Yi,Seonyong Cha
International Memory Workshoppp.1-4, (2024)
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Realistic Noise-aware Training as a Component of the Holistic ACiM Development Platform
Jihun Kim,Sangsu Park, Hongju Suh, Youngjae Kwon, Seonghun Lee, Yubin Lee, Kayoung Kim, Eungu Han, Jongil Kim, Kyu Sung Kim,Hyejung Choi, Seungwook Ryu,
International Memory Workshoppp.1-4, (2024)
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Improvement of MAC Accuracy using Oxygen Diffusion Barriers in Resistive Synaptic Cell Arrays
Youngjae Kwon,Won-Tae Koo,Sangsu Park,Dong Ik Suh, Gunhee Lee,Hyung Dong Lee, Youngbae Ahn,Dohee Kim, Seungwook Ryu,Hoseok Em,Seokjoon Kang, Chang Won Jeong,
International Memory Workshoppp.1-4, (2024)
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QLC Programmable 3D Ferroelectric NAND Flash Memory by Memory Window Expansion using Cell Stack Engineering
Sunghyun Yoon, Sung-In Hong, Daehyun Kim, Garam Choi,Young Mo Kim, Kyunghoon Min,Seiyon Kim,Myung-Hee Na,Seonyong Cha
VLSI Technology and Circuitspp.1-2, (2023)
引用1浏览0EIWOS引用
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Demonstration of crystalline IGZO transistor with high thermal stability for memory applications
Whayoung Kim, Jaehyeon Kim, Dongjin Ko, Jun-Hwe Cha,Gyeongcheol Park, Youngbae Ahn, Jong-Young Lee, Minchul Sung,Hyejung Choi,Seung Wook Ryu,Seiyon Kim,Myung-Hee Na,
VLSI Technology and Circuitspp.1-2, (2023)
引用1浏览0EIWOS引用
1
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A Workfunction Engineered Middle-Silicon-TiN Gate (MSTG) Cell Transistor in 16Gbit DRAM for High Scalability and Long Data Retention
Seong-Wan Ryu,Kyung Kyu Min, Sunghwan Hwang, Hyunmin Seung, Sungsoo Yoon, Yoonjae Nam,Jungmin Moon, Yaeji Kim, Euntae Kim, Jongkook Park, Kyoungchul Jang, Sinwoo Kang,
2023 International Electron Devices Meeting (IEDM) (2023)
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Demonstration of Ultra-thin Ferroelectric/dielectric and Anti-ferroelectric/dielectric Bilayers for Future DRAM Cell Capacitors
Dong Ik Suh,Won-Tae Koo,Youngmo Kim,Ja-Yong Kim,Seung Wook Ryu, Heeyoung Jeon, Ki Vin Im,Gwangyeob Lee,Taeone Youn, Hyeonho Jeong,Seho Lee,Myung-Hee Na,
2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)pp.1-3, (2023)
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A Workfunction Engineered Middle-Silicon-TiN Gate (MSTG) Cell Transistor in 16Gbit DRAM for High Scalability and Long Data Retention
Seong-Wan Ryu,Kyung Kyu Min, Sunghwan Hwang, Hyunmin Seung, Sungsoo Yoon, Yoonjae Nam, Jungmin Moon, Yaeji Kim, Euntae Kim, Jongkook Park, Kyoungchul Jang, Sinwoo Kang,
2023 International Electron Devices Meeting (IEDM)pp.1-4, (2023)
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First demonstration of full integration and characterization of 4F² 1S1M cells with 45 nm of pitch and 20 nm of MTJ size
Soo Man Seo,Hisanori Aikawa,Soo Gil Kim, Toshihiko Nagase, Yuich Ito,Tae Jung Ha, Kenichi Yoshino, Bo Kyung Jung, Tadaaki Oikawa,Ku Youl Jung, Hyun In Moon, Bum Su Kim,
2022 International Electron Devices Meeting (IEDM)pp.10.1.1-10.1.4, (2022)
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