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Satoshi Suzuki received the B.E., M.E., and Ph. D. degrees in electrical engineering from Hokkaido University, Sapporo, Japan, in 1992, 1994, and 1997, respectively.
Since joining the Optoelectronic and Microwave Devices Laboratory, Mitsubishi Electric Corporation, Itami, Japan, in 1997, he has been engaged in the research and development of GaAs-based semiconductor devices and related process technologies, focusing on GaAs-based heterojunction structure field-effect transistors (FETs), AlGaAs/GaAs HBTs, and InGaP/GaAs-HBTs. He is currently responsible for the development of HBTs and their related techniques with the High Frequency and Optical Device Works, Mitsubishi Electric Corporation. His current research interests include GaAs-based HBT PA designs for mobile communications.
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IEEE Transactions on Microwave Theory and Techniquesno. 10 (2016): 3254
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