SangBum Kim (S’05–M’11) received the B.S. degree from Seoul National University, Seoul, Korea, in 2001 and the M.S. and Ph.D. degrees from Stanford University, Stanford, CA, in 2005 and 2010, respectively, all in electrical engineering. Since he joined the IBM T. J. Watson Research Center in 2010, he has been working on phase change memory devices for various memory applications such as storage-class memory, embedded memory, and brain-inspired neuromorphic computing.