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Previously, at the University of Cambridge, UK, I explored electron transport properties of two, one and zero dimensional systems based on GaAs/AlGaAs heterostructure. In disordered two-dimensional system in a zero magnetic field, I demonstrated a crossover from Mott variable range hopping (VRH) to Efros-Shklovskii VRH when either the temperature or the carrier density is reduced. I discovered a large increase in magneto resistance in disordered two-dimensional electron systems with the application of a strong in-plane magnetic field. I also measured electron transport spectroscopy of InAs self-assembled quantum dots incorporated in a modulation doped GaAs/AlGaAs heterostructure and demonstrated a quantum Hall - insulator transition in such systems.
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Kamal Harrison, Dylan A. Jeff,Jonathan M. DeStefano, Olivia Peek,Akihiro Kushima,Jiun-Haw Chu,Humberto R. Gutierrez,Saiful I. Khondaker
Sabin Regmi,Anup Pradhan Sakhya,Tharindu Fernando,Yuzhou Zhao,Dylan Jeff,Milo Sprague, Favian Gonzalez,Iftakhar Bin Elius, Mazharul Islam Mondal,Nathan Valadez,Damani Jarrett,Alexis Agosto,
PHYSICAL REVIEW Bno. 12 (2023)
Sabin Regmi,Iftakhar Bin Elius,Anup Pradhan Sakhya, Dylan Jeff,Milo Sprague, Mazharul Islam Mondal, Damani Jarrett, Nathan Valadez, Alexis Agosto,Tetiana Romanova,Jiun-Haw Chu,Saiful I. Khondaker,
Scientific Reportsno. 1 (2023): 1-9
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Sabin Regmi,Anup Pradhan Sakhya,Tharindu Fernando,Yuzhou Zhao, Dylan Jeff,Milo Sprague, Favian Gonzalez,Iftakhar Bin Elius, Mazharul Islam Mondal, Nathan Valadez, Damani Jarrett, Alexis Agosto,
PHYSICAL REVIEW Bno. 12 (2023)
SCIENTIFIC REPORTSno. 1 (2023): 18618-18618
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