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Previously, at the University of Cambridge, UK, I explored electron transport properties of two, one and zero dimensional systems based on GaAs/AlGaAs heterostructure. In disordered two-dimensional system in a zero magnetic field, I demonstrated a crossover from Mott variable range hopping (VRH) to Efros-Shklovskii VRH when either the temperature or the carrier density is reduced. I discovered a large increase in magneto resistance in disordered two-dimensional electron systems with the application of a strong in-plane magnetic field. I also measured electron transport spectroscopy of InAs self-assembled quantum dots incorporated in a modulation doped GaAs/AlGaAs heterostructure and demonstrated a quantum Hall - insulator transition in such systems.
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PHYSICAL REVIEW Bno. 12 (2023)
Scientific Reportsno. 1 (2023): 1-9
PHYSICAL REVIEW Bno. 12 (2023)
Physical reviewno. 12 (2023)
SCIENTIFIC REPORTSno. 1 (2023): 18618-18618
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