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论文共 19 篇作者统计合作学者相似作者

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Towards large scale integration of MoS2/graphene heterostructure with ALD-grown MoS2
Berangere Hyot, Clotilde Ligaud, Tae Jin Yoo, Julien David-Vifflantzeff,Nicolas Gauthier,Stephane Cadot,Van Hoan Le, Paul Brunet, Lucie Le Van-Jodin
NANOTECHNOLOGYno. 16 (2024)
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Development and optimization of large-scale integration of 2D material in memristors
Clotilde Ligaud, Lucie Le Van-Jodin,Bruno Reig, Pierre Trousset, Paul Brunet, Michaël Bertucchi, Clémence Hellion,Nicolas Gauthier, Le Van-Hoan,Hanako Okuno,Djordje Dosenovic,Stéphane Cadot,
arxiv（2024）
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Towards large scale integration of MoS2/graphene heterostructure with ALD-grown MoS2
Bérangère Hyot, Clotilde Ligaud, Tae Jin Yoo, Julien David-Vifflantzeff,Nicolas Gauthier,Stéphane Cadot, Van Hoan Le, Paul Brunet, Lucie Le Van-Jodin
Nanotechnologyno. 16 (2024)
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In the New Potential Synthesis Route of Molybdenum Nitride Nanosheets by Nitriding Mos2 Deposited by Atomic Layer Deposition (Ald)
Julien Patouillard, Rémy Gassilloud,Frédéric Mercier, Arnaud Mantoux,Raphaël Boichot, Mathieu Bernard, Nicolas Gauthier,Stéphane Cadot, Christine Raynaud, Frédéric Gianesello,Elisabeth Blanquet
SSRN Electronic Journal (2023)
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Post-deposition annealing challenges for ALD Al0.5Si0.5Ox/n-GaN MOS devices
P. Fernandes Paes Pinto Rocha,L. Vauche, M. Bedjaoui,S. Cadot,B. Mohamad, W. Vandendaele,E. Martinez,N. Gauthier, F. Pierre, H. Grampeix,G. Lefevre, B. Salem,
Solid-State Electronics (2023): 108780-108780
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Chemical conversion of MoS2 thin films deposited by atomic layer deposition (ALD) into molybdenum nitride monitored by in situ reflectance measurements
J. Patouillard,R. Gassilloud, F. Mercier, A. Mantoux, R. Boichot,A. Crisci, M. Bernard,N. Gauthier,S. Cadot, C. Raynaud, F. Gianesello, E. Blanquet
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY Ano. 5 (2023)
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