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Bio
Sylvie Bruyère received the Engineering degree in physics from the Institut National Polytechnique de Grenoble (INPG), Grenoble, France, in 1997, the M.S. degree in microelectronics from the University of Grenoble, Grenoble, in 1998, and the Ph.D. degree in microelectronics from INPG in 2000. Her Ph.D. work was devoted to the study of ultrathin oxide reliability in deep-submicron technologies, which was carried out through a collaboration between STMicroelectronics Central R&D Laboratories, Crolles, France, and the Semiconductor Device Physics Laboratory, Laboratoire de Physique des Composants à Semiconducteurs (LPCS)/Ecole Nationale Supérieure d'Electronique et de Radioélectricité de Grenoble (ENSERG), Grenoble.
Since 2000, she has been with STMicroelectronics. She was first with the Reliability Group, coordinating the dielectric and memory reliability activities in deep-submicron CMOS and BICMOS technologies. She joined the Device Development Team for BiCMOS and analog applications in 2003, taking charge of advanced device evaluation activities. Since 2006, she has been the Manager of the Advanced Passive Device Development Team. She is the author or coauthor of more than 60 papers. Her main research interests are dielectric properties, nonvolatile memories, and analog devices in general.
Research Interests
Papers共 72 篇Author StatisticsCo-AuthorSimilar Experts
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S Cremer,N Segura, P Joubin,Mircea Marin, Michael E Thomas, Christoph Richard,S Boret, Diane Benoit,S Bruyere
E Bouyssou,G Guegan,S Bruyere,Robert Pezzani, L Berneux, L D De Morals,J P Rebrasse,Christine Anceau,Christian Nopper
mag(2007)
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IEEE Transactions on Device and Materials Reliabilityno. 2 (2007): 315-323
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Author Statistics
#Papers: 65
#Citation: 1384
H-Index: 17
G-Index: 36
Sociability: 5
Diversity: 1
Activity: 0
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