Serge Biesemans - imec | 人才画像

基本信息

浏览量：5

职业迁徙

个人简介

CMOS Device integration. Circuit design.

研究兴趣

论文共 234 篇作者统计合作学者相似作者

按年份排序按引用量排序主题筛选期刊级别筛选合作者筛选合作机构筛选

Monolithic-CFET with Direct Backside Contact to Source/Drain and Backside Dielectric Isolation

A. Vandooren, K. Stiers, C. Sheng,C. Toledo de Carvalho Cavalcante,M. Hosseini,D. Batuk, A. Peng, X. Zhou,H. Mertens,A. Veloso, A. Mingardi, S. Sarkar Kumar, R. Kumar Saroj,K. D'havé,T. Chiarella,J. Bömmels,R. Loo,E. Rosseel,C. Porret,Y. Shimura, A. Akula,S. Choudhury,V. Brissonneau,E. Dupuy, T. Sarkar,A. Peter,N. Jourdan,J.P. Soulie,K. Vandersmissen,S. Iacovo,D. Montero,E. Vrancken,F. Sebaai,P. Puttarame Gowda, K. Lai,N. Buccheri,P. Matagne,B. T. Chan, A. Sepulveda Marquez,R. Langer, I. Gyo Koo,E. Altamirano Sanchez,K. Devriendt,F. Lazzarino,J. Mitard,J. Geypen,E. Grieten, Y-F. Chen, F. Verbeek, H. Pollenus,J. Heijlen,L.P.B. Lima,F. Holsteyns,S. Subramanian,N. Horiguchi,S. Demuynck,S. Biesemans

2024 IEEE International Electron Devices Meeting (IEDM)pp.1-4, (2024)

引用0浏览0EIWOS引用

Monolithic Complementary Field Effect Transistors (CFET) Demonstrated Using Middle Dielectric Isolation and Stacked Contacts

Steven Demuynck,Victor Vega-Gonzalez,C. Toledo de Carvalho Cavalcante,L. Petersen Barbosa Lima, K. Stiers, C. Sheng,A. Vandooren,M. Hosseini, X. Zhou,Hans Mertens,Thomas Chiarella,Jürgen Bömmels,Roger Loo,E. Rosseel,Clement Porret,Y. Shimura, A. Akula,G. Mannaert,S. Choudhury,V. Brissonneau,E. Dupuy, T. Sarkar,Nathali Franchina-Vergel,A. Peter,Nicolas Jourdan,J. P. Soulie,Kevin Vandersmissen,F. Sebaai,P. Puttarame Gowda, K. Lai, A. Mingardi, S. Sumar Sarkar,K. D'Have,B. T. Chan, A. Sepulveda Marquez,R. Langer, I. Gyo Koo,E. Altamirano Sanchez,Katia Devriendt, P. Rincon Delgadillo,F. Lazzarino,Jérôme Mitard,J. Geypen,E. Grieten,D. Batuk, Y.-F. Chen, F. Verbeek,F. Holsteyns,S. Subramanian,N. Horiguchi,S. Biesemans

Symposium on VLSI Technologypp.1-2, (2024)

引用1浏览0EIWOS引用

Front-side Integration of Middle-of-line Stacked Contacts for Monolithic CFET

V. Vega-Gonzalez, K. Stiers, C. Sheng,S. Demuynck,C Toledo de Carvalho Cavalcante, L. Petersen,T. Chiarella,J. Boemmels, T. Sarkar, N. Franchina Vergel,D. Radisic,R. Loo,E. Rosseel,C. Porret,G. Mannaert,S. Choudhury,V. Brissonneau,E. Dupuy,A. Peter,N. Jourdan,J-P. Soulié,T. Hakamata, A. Romo-Negreira,R. Clark,K. Vandersmissen,F. Sebaai,P. Puttarame Gowda, J.G. Lai, A. Mingardi, S. Kumar Sarkar,B. T. Chan, A. Sepulveda Marquez,R. Langer, I. Gyo Koo,E. Altamirano Sanchez,K. Devriendt, P. Rincon Delgadillo,F. Lazzarino,J. Mitard,J. Geypen,D. Batuk, Y-F. Chen, F. Verbeeck,F. Holsteyns,S. Subramanian,Zs. Tőkei,N. Horiguchi,S. Biesemans

2024 IEEE International Interconnect Technology Conference (IITC)pp.1-3, (2024)

引用1浏览0EIWOS引用

Vt Fine-Tuning in Multi-Vt Gate-All-Around Nanosheet Nfets Using Rare-Earth Oxide-Based Dipole-First Gate Stack Compatible with CFET Integration

Hiroaki Arimura,Hans Mertens,Jacopo Franco, L. Lukose, W. Maqsood,S. Brus,Thomas Chiarella, A. Impagnatiello, S. Homkar, V. K. Mootheri, C. Yin,G. Alessio Verni,M. Givens,L. Petersen Barbosa Lima,S. Biesemans,N. Horiguchi

Symposium on VLSI Technology（2024）

引用1浏览0EIWOS引用

Demonstration of Cavity Capacitor for Advanced Nanosheet Gate Stack Study

Camila Cavalcante,H. Arimura,Y. Oniki,F. Sebaai,E. Capogreco,L-A. Ragnarsson,B.T. Chan,A. Hikavyy,H. Mertens,K. Vandersmissen,E. Dentoni Litta,S. Subramanian,S. Biesemans,N. Horiguchi

Extended Abstracts of the 2023 International Conference on Solid State Devices and Materials (2023)

引用0浏览0引用

Integration of a Stacked Contact MOL for Monolithic CFET

Victor Vega-Gonzalez,D. Radisic,Bt Chan,S. Choudhury, S. Wang, A. Mingardi, Q. Toan Le, H. Decoster,Y. Oniki, P. Puttarame,Kevin Vandersmissen,J. P. Soulie,A. Peter,A. Sepulveda,D. Batuk,G. T. Martinez,Olivier Richard,Jürgen Bömmels,S. Biesemans,E. Dentoni Litta,Naoto Horiguchi, S. Park,Zsolt Tokei

2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) (2023)

引用2浏览0EIWOS引用

Nanosheet-based Complementary Field-Effect Transistors (cfets) at 48nm Gate Pitch, and Middle Dielectric Isolation to Enable CFET Inner Spacer Formation and Multi-Vt Patterning

Hans Mertens,M. Hosseini,Thomas Chiarella,D. Zhou,S. Wang,G. Mannaert,E. Dupuy,D. Radisic,Z. Tao,Y. Oniki,Andriy Hikavyy, R. Rosseel, A. Mingardi,S. Choudhury,P. Puttarame Gowda,F. Sebaai,A. Peter,Kevin Vandersmissen,J. P. Soulie,An De Keersgieter,L. Petersen Barbosa Lima, C. Cavalcante,D. Batuk,G. T. Martinez,J. Geypen,F. Seidel, K. Paulussen,P. Favia,Jürgen Bömmels,Roger Loo,P. Wong, A. Sepulveda Marquez,B. T. Chan,Jérôme Mitard,S. Subramanian,S. Demuynck,E. Dentoni Litta,N. Horiguchi,S. Samavedam,S. Biesemans

2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) (2023)

引用7浏览0EIWOS引用

3D Stacked Devices and MOL Innovations for Post-Nanosheet CMOS Scaling

N. Horiguchi,H. Mertens,T. Chiarella,S. Demuynck,V. Vega-Gonzalez,A. Vandooren,A. Veloso,M. Garcia Bardon,G. Sisto,A. Gupta,Z. Tokei,S. Biesemans,J. Ryckaert

2023 International Electron Devices Meeting (IEDM)pp.1-4, (2023)

引用2浏览0EIWOS引用

加载更多

作者统计

合作学者

合作机构

D-Core

合作者
学生
导师

暂无相似学者，你可以通过学者研究领域进行搜索筛选

数据免责声明

页面数据均来自互联网公开来源、合作出版商和通过AI技术自动分析结果，我们不对页面数据的有效性、准确性、正确性、可靠性、完整性和及时性做出任何承诺和保证。若有疑问，可以通过电子邮件方式联系我们：report@aminer.cn