基本信息
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Bio
Silvia Beltrami was born in Bergamo, Italy, in 1978. She received the Laurea degree in electronics engineering from the Politecnico di Milano, Milan, Italy, in 2003.
In 2003, she joined the R&D Non-Volatile Memory Technology Development Team, STMicroelectronics, working on NAND reliability. She was also involved in the development of NAND multilevel devices. She is currently with the R&D Team, Micron, Agrate Brianza, Italy. She has co-authored various scientific papers about reliability and radiation effects on Flash memory devices. Her current activity is mainly focused on PCM reliability. Her interests are also focused on radiation effects on nonvolatile memory reliability.
Research Interests
Papers共 55 篇Author StatisticsCo-AuthorSimilar Experts
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IEEE Transactions on Nuclear Scienceno. 99 (2024): 1-1
IEEE Transactions on Nuclear Scienceno. 4 (2023): 308-313
IEEE Transactions on Nuclear Scienceno. 99 (2023): 1-1
IEEE Transactions on Nuclear Scienceno. 99 (2023): 1-1
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Author Statistics
#Papers: 55
#Citation: 1071
H-Index: 22
G-Index: 31
Sociability: 5
Diversity: 2
Activity: 2
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