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个人简介
Roy Scheuerlein received the B.S. degree in physics and Ph.D. degree in electrical engineering from Stanford University, Stanford, CA, USA, focusing on semiconductor memory.
He held a variety of engineering positions with IBM, where he focused on leading-edge memory technologies moving them from the research stage to product introduction including trench DRAM memories; high speed DRAMS; and embedded Flash memory. He developed the array architecture for high density and high performance (3 ns) MRAM memory and designed and presented the first MRAM memory development vehicle at the 2000 ISSCC. At the startup company, Matrix Semiconductor he developed the architecture for the first commercially successful 3-D OTP memory product. Since the acquisition of Matrix Semiconductor Company by SanDisk, he has continued to develop 3-D memory. His current area of interest is 3-D ReRAM memory design and technology for the post nand era.
研究兴趣
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mag(2015)
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Tz-yi Liu,Tian Hong Yan,Roy Scheuerlein,Yingchang Chen, Jeffrey KoonYee Lee,Gopinath Balakrishnan,Gordon Yee,Henry Zhang,Alex Yap,Jingwen Ouyang, Takahiko Sasaki,Ali Al-Shamma,
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