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个人简介
Ronghua Ni received the B.S. and M.S. degrees in microelectronics from Fudan University, Shanghai, China, in 2005 and 2008, respectively, and the Ph.D. degree in electrical engineering from Oregon State University, Corvallis, OR, USA, in 2013.
During the summer of 2011, she was an Intern with the RF Group, Analog Devices, Wilmington, MA, USA, where she designed millimeter-wave quadrature modulator. She received Analog Devices Graduate Fellowship in 2011. Since 2013, she has been with Samsung Semiconductor, Inc., San Jose, CA, USA. She is currently a Staff Design Engineer developing RF transceivers for cellular applications.
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2018 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)pp.6403-6408, (2018)
2017 IEEE INTERNATIONAL SOLID-STATE CIRCUITS CONFERENCE (ISSCC)pp.422-422, (2017)
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2017 IEEE International Solid-State Circuits Conference (ISSCC) (2017)
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