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职业迁徙
个人简介
My career has been devoted to microelectronics research and development.
I am best known for two achievements:
My invention of the DRAM cell (Dynamic Random Access Memory), which forms the basis for the main memory installed in virtually every computer, cellphone, tablet and other computer devices.
My leadership in developing MOSFET scaling equations that describe how voltage, capacitance, power and other quantities change as lithographies shrink, i.e., as transistors become smaller. These "Dennard Scaling" equations provide the physical foundation that enabled the realization of Gordon Moore's observations about chip transistor capacity doubling every 18-24 months.
I am best known for two achievements:
My invention of the DRAM cell (Dynamic Random Access Memory), which forms the basis for the main memory installed in virtually every computer, cellphone, tablet and other computer devices.
My leadership in developing MOSFET scaling equations that describe how voltage, capacitance, power and other quantities change as lithographies shrink, i.e., as transistors become smaller. These "Dennard Scaling" equations provide the physical foundation that enabled the realization of Gordon Moore's observations about chip transistor capacity doubling every 18-24 months.
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Handbook of Thin Film Depositionpp.3-18, (2018)
ieee soi 3d subthreshold microelectronics technology unified conferencepp.1-2, (2017)
mag(2014)
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