Rinus T. P. Lee - Silicon Nano;Device Lab;Dept . of Electrical and Computer Engineering;National University of Singapore;Device Lab, National University of Singapore

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Yield and Failure Analysis of FinFET Source to Drain Leakage in 12nm Technology

Felix Beaudoin, Satish Kodali, Rohan Deshpande,Wayne Zhao,Edmund Banghart,Rinus Lee, Thirukumaran Mahalingam, Nuh Yuksek, Lu Yuan, Wang Tao,Lillian Li, Sushruth Goud Perumalla,

International Symposium for Testing and Failure AnalysisISTFA 2020: Papers Accepted for the Planned 46th International Symposium for Testing and Failure Analysis (2020)

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Low Temperature Microwave Anneal in FinFET Fabrication

Joseph Kassim,Rinus T. P. Lee,Rishikesh Krishnan, Domingo Ferrer, Jie Yang, Yuriy Shusterman,Israel Ramirez,Huang Liu, Jinping Lui, Bharat Krishnan

ECS Transactionsno. 8 (2018): 11-13

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Nanosecond Laser Anneal For Beol Performance Boost In Advanced Finfets

Rinus T.P. Lee, N. Petrov, J. Kassim, M. Gribelyuk, J. Yang, L. Cao,K.B. Yeap,T. Shen,A. N. Zainuddin, A. Chandrashekar, S. Ray,E. Ramanathan,

2018 IEEE SYMPOSIUM ON VLSI TECHNOLOGY（2018）

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Effects of Metal Orientation and Alloying on Metal-Semiconductor Schottky Barriers

Eduardo C. Silva,Domingo Ferrer,J. Israel Ramirez,Praneet Adusumilli,Oscar D. Restrepo,Rinus T.P. Lee, Wonwoo Kim,Murali Kota

Bulletin of the American Physical Society（2017）

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Scaling Challenges for Advanced CMOS Devices

Ajey Poovannummoottil Jacob,Ruilong Xie,Min Gyu Sung,Lars Liebmann,Rinus T. P. Lee, Bill Taylor

International Journal of High Speed Electronics and Systems（2017）

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A 7nm Cmos Technology Platform For Mobile And High Performance Compute Application

S. Narasimha, B. Jagannathan, A. Ogino,D. Jaeger,Brian J. Greene,C. Sheraw, K. Zhao, B. S. Haran,Unoh Kwon, A. K. M. Mahalingam,B. Kannan, B. Morganfeld,

2017 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM)（2017）

引用55浏览0EIWOS引用

Heavily tellurium doped n-type InGaAs grown by MOCVD on 300 mm Si wafers