Rino Choi

基本信息

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个人简介

Rino Choi currently works at the Department of Materials Science and Engineering, Inha University. Rino does research in Materials Physics, Solid State Physics and Materials Science.

研究兴趣

论文共 382 篇作者统计合作学者相似作者

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Impact of Tetrakis(ethylmethylamino)-based Precursor and Oxygen Source Selection on Atomic Layer Deposition of Ferroelectric HfxZr1-xO2 Thin Films

Jin-Hyun Kim, Siun Song, Dushyant M. Narayan,Dan N. Le, Thi Thu Huong Chu, Minjong Lee, Geon Park, Seungbin Lee, Jongmug Kang,Jeffrey Spiegelman,Marshall Benham,Si Joon Kim,Rino Choi,Jiyoung Kim

APPLIED SURFACE SCIENCE (2025)

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In Situ Analysis of Electron-Induced Chemical Transformations in Vapor-Phase-Synthesized Al-Based Inorganic-Organic Hybrid Thin Films for EUV Resist Platform

Dan N Le, Won-Il Lee,Su Min Hwang,Ashwanth Subramanian, Nikhil Tiwale, Jihoon Woo,Jean-Francois Veyan,Abdullah Al-Mahboob,Jerzy T Sadowski, Jin-Hyun Kim, Thi Thu Huong Chu, Doo San Kim, Minjong Lee,Rino Choi,Jinho Ahn,Myung Mo Sung,Chang-Yong Nam,Jiyoung Kim

ACS applied materials & interfacesno. 12 (2025): 18720-18730

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Defect Passivation of Hafnium Oxide Ferroelectric Tunnel Junction Using Forming Gas Annealing for Neuromorphic Applications

Manh-Cuong Nguyen,Kyung Kyu Min, Wonjun Shin,Jiyong Yim,Rino Choi,Daewoong Kwon

Nano Convergence（2025）

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Tunable Ferroelectric Properties of HfO $_{\text{2}}$ -Based Oxides: Role of Aluminum Doping and Bottom Electrodes

Changhyeon Han,Ki Ryun Kwon,Soi Jeong,Been Kwak,Jiyong Yim,Eun Chan Park,Ji Won You,Rino Choi,Daewoong Kwon

IEEE TRANSACTIONS ON ELECTRON DEVICESno. 2 (2025): 635-639

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Effects of Deposition Power and Thermal Treatment on Ferroelectric Properties of Sputtered Hf $_\text{0.5}$ Zr $_\text{0.5}$ O $_\Text{2}$

Changhyeon Han,Ki Ryun Kwon,Jiyong Yim,Jeonghan Kim,Sangwoo Kim,Soi Jeong,Eun Chan Park,Ji Won You,Rino Choi,Daewoong Kwon

IEEE Transactions on Electron Devices（2024）

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BEOL Compatible Ultra-Low Operating Voltage (0.5 V) and Preconfigured Switching Polarization States in Effective 3 Nm Ferroelectric HZO Capacitors

Minjong Lee, Jin-Hyun Kim,Dan N. Le,Seojun Lee, Si-Un Song,Rino Choi,Youngbae Ahn,Seung Wook Ryu,Pil-Ryung Cha,Chang-Yong Nam,Seongbin Park, Jongmug Kang,Si Joon Kim,Jiyoung Kim

Symposium on VLSI Technologypp.1-2, (2024)

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Metal Interlayer Insertion for Grain Engineering in Ferroelectric Hf$_{\text{0.5}}$Zr$_{\text{0.5}}$O$_{\text{2}}$

Anh-Duy Nguyen, Si-Un Song,An Hoang Thuy Nguyen, Cuong-Manh Nguyen, Ye-Eun Hong,Yeongshin Ham, Jae-Kyeong Kim, Jong-Hwa Baek, Kyungsoo Hwang, Geon Park,Hyun Soo Kim, Hoyeon Sin,Rino Choi

IEEE Transactions on Electron Devicespp.1-5, (2024)

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Nitrogen Incorporated Interlayer for Enhanced Hf-Zr-O Ferroelectric Tunnel Junctions in Ternary-Content-Addressable-Memory

Jaekyeong Kim,Manh-Cuong Nguyen,An Hoang-Thuy Nguyen,Anh-Duy Nguyen,Hyunsoo Kim, Kyungsoo Hwang, Geon Park, Hoyeon Shin, Siun Song, Daewoong Kwon,Rino Choi

Extended Abstracts of the 2024 International Conference on Solid State Devices and Materials (2024)

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Addressing Mobility Overestimation in Short-Channel IGZO TFTs Using the Gated Van Der Pauw Method

Woo-Seok Lee, Jaeho Lee, Amarja Katware, Noh-Hwal Park,Jiyoung Kim,Rino Choi,Jeong-Hwan Lee

ACS APPLIED MATERIALS & INTERFACESno. 46 (2024): 63778-63785

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Experimental Demonstration of Combination-Encoding Content-Addressable Memory of 0.75 Bits Per Switch Utilizing Hf-Zr-O Ferroelectric Tunnel Junctions

Manh-Cuong Nguyen,Jiwon You, Yonguk Sim,Rino Choi,Doo Seok Jeong,Daewoong Kwon

Materials Horizons（2024）

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论文共 382 篇作者统计合作学者相似作者