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个人简介
Richard Lai (F’10) received the B.S. degree in electrical
engineering from the University of Illinois–Urbana, Champaign, IL, USA, in 1982 and the M.S and Ph.D. degrees
from the University of Michigan, Ann Arbor, MI, USA, in 1988 and 1991, respectively.
He possesses 30 years of experience in the research, development, and production of advanced HEMT device and MMIC RF
technologies. Since 1994, he has been the Principal Investigator for advanced HEMT research and development with
Northrop Grumman Aerospace Systems, Redondo Beach, CA, USA, with the title of Technical Fellow since 2002. He has
authored or coauthored more than 200 total papers, patents, and conference presentations in the area of advanced GaAs
and InP-based device and circuit technology, establishing record performance for the lowest noise amplifiers, highest
frequency amplifiers, and highest power amplifiers.
Dr. Lai was the recipient of an IEEE IPRM Paper of the Decade Award, JPL Award of Excellence, IEEE MTT Young
Engineers Award, 2004 Space Academy Hall of Fame, and 2012 IEEE MWCL Tatsao Itoh Best Paper Award.
研究兴趣
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Daniel White,William McGenn,Danielle George,Gary A. Fuller,Kieran Cleary,Anthony Readhead,Richard Lai, Gerry Mei
EXPERIMENTAL ASTRONOMYno. 2-3 (2019): 137-143
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