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Dr. Raghvendra Sahai Saxena was born in Etah district, Uttar Pradesh, India. After completing his B. E. degree in Electronics and Communication Engineering from G. B. Pant Engineering College, Uttarakhand in 1997, he joined Solid State Physics Laboratory (SSPL), Delhi in 1998. He received the M. Tech. degree in Microelectronics from Indian Institute of Technology (IIT), Bombay in 2003. He was awarded Prof. G. N. Revankar Prize by IIT Bombay for securing the highest marks in microelectronics (batch 2001-2003), Electrical Engineering Department, IIT Bombay. He received his Ph.D. degree in Design and Simulation of Trench Gate Power MOSFETs for RF and Switching Applications from IIT Delhi in 2012. He did post graduate diploma in applied statistics (PGDAST) from IGNOU in 2016, for which he received Gold Medal. He is American Society for Quality (ASQ) certified reliability engineer.
Since 1998, Dr. Saxena has been working at SSPL, where he is heading a research group working on the design, modeling and characterization of Infrared detectors and their readout circuits. He is a fellow of IETE and IEI. He is also a member of Semiconductor Society of India and International Association of Engineers.
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论文共 70 篇作者统计合作学者相似作者
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2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)pp.1-3, (2024)
Non-Metallic Material Scienceno. 2 (2024): 26-36
Journal of Electrical and Electronic Engineering (2023)
Aparna Saxena,Anjali Saxena, Rupin Bharti, Harish Nayak, Akanksha Kapoor, Shabeeb Amayur,Raghvendra Sahai Saxena
Physics Educationno. 1 (2022)
MICROSYSTEM TECHNOLOGIES-MICRO-AND NANOSYSTEMS-INFORMATION STORAGE AND PROCESSING SYSTEMSno. 12 (2022): 2755-2764
2021 International Conference on Advances in Technology, Management & Education (ICATME)pp.185-189, (2021)
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