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Bio
Nagarajan Raghavan is an Assistant Professor at the Singapore University of Technology and Design (SUTD) in the Engineering Product Development pillar. Prior to this, he was a post-doc at the Massachusetts Institute of Technology (MIT) in Boston and at the Interuniversity Microelectronics Center (IMEC) in Belgium, in joint association with the Katholieke Universiteit Leuven (KUL). He obtained his Ph.D. (Microelectronics, 2012) at the Division of Microelectronics, Nanyang Technological University (NTU), Singapore and S.M. (Advanced Materials for Micro & Nano Systems, 2008) and M.Eng (Materials Science and Engineering, 2008) from National University of Singapore (NUS) and Massachusetts Institute of Technology (MIT), Boston respectively. His work focuses on statistical characterization and reliability modeling of dielectric breakdown and resistance switching in novel high-κ dielectric material based logic and memory device stacks. His other research interests include random telegraph noise, prognostics for nanodevices, design for reliability and reliability statistics. He is the IEEE EDS Early Career Award recipient for 2016, Asia-Pacific recipient for the IEEE EDS PhD Student Fellowship in 2011 and the IEEE Reliability Society Graduate Scholarship Award in 2008. To date, he has authored / co-authored more than 125 international peer-reviewed publications and four invited book chapters as well. He also holds a US patent as a co-inventor for using CMOS platform to fabricate RRAM devices. He has served on the review committee for various IEEE journals and conferences including IRPS, IIRW, IPFA, ISDRS and ESREF. He is currently a Member of IEEE (2005-present) and was an invited member of the IEEE GOLD committee (2012-2014).
Research Interests
Papers共 288 篇Author StatisticsCo-AuthorSimilar Experts
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期刊级别
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ADVANCED MATERIALS TECHNOLOGIES (2024)
Solid-State Electronics (2024): 108817-108817
ADVANCED ENGINEERING MATERIALSno. 5 (2024)
INTERNATIONAL JOURNAL OF HYDROGEN ENERGY (2024): 1347-1361
MATERIALS TRANSACTIONS (2024)
RSC ADVANCESno. 22 (2024): 15249-15260
Scientific Reportsno. 1 (2024): 4487-4487
IEEE Electron Device Lettersno. 99 (2024): 1-1
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Author Statistics
#Papers: 289
#Citation: 4158
H-Index: 31
G-Index: 54
Sociability: 6
Diversity: 1
Activity: 5
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