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His work has been focusing on the reliability aspects of thin insulating layers under electrical stress. His current research interests include the physics of degradation and breakdown phenomena in gate oxide films, the reliability of flash memory devices and the characterization and the reliability of high-k materials as gate insulators for future CMOS generations and memory applications. Later, he has been working mainly on Resistive RAM memory development and modeling. He is currently involved in the exploration of Resistive RAM for machine learning purposes.
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IEEE Transactions on Electron Devicesno. 12 (2023): 6512-6519
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERSno. 8 (2023)
2023 IEEE International Reliability Physics Symposium (IRPS)pp.1-7, (2023)
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IEEE Transactions on Electron Devicesno. 5 (2023): 2276-2281
2023 IEEE International Reliability Physics Symposium (IRPS)pp.1-9, (2023)
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IEEE TRANSACTIONS ON ELECTRON DEVICESno. 8 (2023): 4170-4177
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