基本信息
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Bio
Peter Gammon (Senior Member, IEEE) received the Ph.D. degree in SiC power devices from the University of Warwick, Coventry, U.K., in 2010. He is currently a Professor of power semiconductor devices with the School of Engineering, University of Warwick. He has authored or coauthored more than 100 journal and conference papers, with over 850 citations, and is the author of three patents. His research interests include ultra-high voltage SiC power devices, radiation hardening SiC power device, and electrical characterisation techniques.
Research Interests
Papers共 131 篇Author StatisticsCo-AuthorSimilar Experts
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Micromachinesno. 2 (2025)
Diffusion and defect data, solid state data Part B, Solid state phenomena/Solid state phenomena (2024): 177-182
2024 IEEE Energy Conversion Congress and Exposition (ECCE)pp.6764-6770, (2024)
Solid State Phenomena (2024): 99-104
2024 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe (WiPDA Europe)pp.1-5, (2024)
IEEE Transactions on Electron Devicespp.1-8, (2024)
IEEE TRANSACTIONS ON INDUSTRY APPLICATIONSno. 3 (2024): 4251-4263
Applied Physics Lettersno. 19 (2024)
2024 36TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND IC S, ISPSD 2024pp.132-135, (2024)
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Author Statistics
#Papers: 131
#Citation: 1005
H-Index: 17
G-Index: 26
Sociability: 6
Diversity: 2
Activity: 11
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