Peter Brückner

Peter Brückner received the Dipl.-Ing. degree in electrical engineering and the Ph.D. degree in the field of gallium-nitride (GaN)-epitaxy and freestanding GaN-substrates from Ulm University, Ulm, Germany, in 2004 and 2008, respectively. Afterward, he joined the Institute of Optoelectronics, Ulm University, as a Member of Scientific Staff. From 2008 to 2010, he was a Development Engineer with United Monolithic Semiconductors, Ulm, for GaN high-electron-mobility transistor (HEMT) technologies. He joined the Fraunhofer Institute for Applied Solid State Physics, Freiburg im Breisgau, Germany, in 2011, as the Responsible Group-Manager for plasma etching, where he also is in charge of the development for short gate-length GaN-on-silicon-carbide (SiC) technologies.