基本信息
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Career Trajectory
Bio
Peter Brückner received the Dipl.-Ing. degree in electrical engineering and the Ph.D. degree in the field of gallium-nitride (GaN)-epitaxy and freestanding GaN-substrates from Ulm University, Ulm, Germany, in 2004 and 2008, respectively.
Afterward, he joined the Institute of Optoelectronics, Ulm University, as a Member of Scientific Staff. From 2008 to 2010, he was a Development Engineer with United Monolithic Semiconductors, Ulm, for GaN high-electron-mobility transistor (HEMT) technologies. He joined the Fraunhofer Institute for Applied Solid State Physics, Freiburg im Breisgau, Germany, in 2011, as the Responsible Group-Manager for plasma etching, where he also is in charge of the development for short gate-length GaN-on-silicon-carbide (SiC) technologies.
Research Interests
Papers共 133 篇Author StatisticsCo-AuthorSimilar Experts
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IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES (2024)
2024 IEEE TOPICAL CONFERENCE ON RF/MICROWAVE POWER AMPLIFIERS FOR RADIO AND WIRELESS APPLICATIONS, PAWRpp.74-77, (2024)
2023 18TH EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE, EUMICpp.149-152, (2023)
P. Neininger,M. Mikulla, P. Döring,M. Dammann, F. Thome,S. Krause,D. Schwantuschke,P. Brückner,C. Friesicke,R. Quay
e-Prime - Advances in Electrical Engineering, Electronics and Energy (2023): 100177-100177
2023 18TH EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE, EUMICpp.5-8, (2023)
IEEE Transactions on Electron Devicesno. 3 (2023): 947-952
2023 ASIA-PACIFIC MICROWAVE CONFERENCE, APMCpp.231-233, (2023)
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