Pengfei Jiang - Chinese Academy of Sciences(CAS) Institute of Microelectronics

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Demonstration of Large MW and Prominent Endurance in a Hf0.5Zr0.5O2 FeFET with IGZO Channel Utilizing Postdeposition Annealing

Pan Xu,Pengfei Jiang, Yang,Tiancheng Gong, Wei,Yuan Wang,Xiao Long,Jiebin Niu, Zijing Wu, Xueyang Peng,Zhenhua Wu,Qing Luo

IEEE ELECTRON DEVICE LETTERSno. 11 (2024): 2110-2113

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Deep Insights into the Mechanism of Nitrogen on the Endurance Enhancement in Ferroelectric Field Effect Transistors: Trap Behavior During Memory Window Degradation

Yuanquan Huang, Hongye Yuan,Bowen Nie,Tiancheng Gong,Yuan Wang,Shuxian Lv,Pengfei Jiang, Wei, Yang,Junshuai Chai,Zhicheng Wu,Xiaolei Wang,Qing Luo

APPLIED PHYSICS LETTERSno. 13 (2024)

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Silicon Atomic-Layer Doped Hf$_{\text{0.7}}$Zr$_{\text{0.3}}$O$_{\text{2}}$ Films: Toward Low Coercive Field (0.64 MV/cm) and High Endurance (${>}\text{10}^{\text{12}}$ Cycles)

Lu Tai,Wei Wei,Pengpeng Sang,Xiaopeng Li,Xiaoyu Dou,Guoqing Zhao,Pengfei Jiang,Qing Luo,Xuepeng Zhan,Jixuan Wu,Jiezhi Chen

IEEE Transactions on Electron Devicespp.1-4, (2024)

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Spatial and Energetic Mapping of Traps in FeFET During Endurance Process by Advanced Trap Characterization Platform

Hongye Yuan,Yuanquan Huang,Tiancheng Gong,Yuan Wang,Pengfei Jiang, Wei, Yang,Junshuai Chai,Zhicheng Wu,Xiaolei Wang,Qing Luo

IEEE ELECTRON DEVICE LETTERSno. 12 (2024): 2371-2374

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Silicon Atomic-Layer Doped Hf0.7Zr0.3O2 Films: Toward Low Coercive Field (0.64 MV/cm) and High Endurance (>1012 Cycles)

Lu Tai, Wei,Pengpeng Sang,Xiaopeng Li,Xiaoyu Dou,Guoqing Zhao,Pengfei Jiang,Qing Luo,Xuepeng Zhan,Jixuan Wu,Jiezhi Chen

IEEE TRANSACTIONS ON ELECTRON DEVICES（2024）

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Enhanced Electro‐Resistance and Tunable Asymmetric Depolarization Behavior in Hf0.5Zr0.5O2 Ferroelectric Tunnel Junction by Bottom Oxide Interfacial Layer

Shuxian Lyu,Xiao Long, Yang, Wei, Yuanxiang Chen, Hong Xie,Bowen Nie,Boping Wang,Yuan Wang,Pengfei Jiang,Tiancheng Gong,Yan Wang,Qing Luo

ADVANCED ELECTRONIC MATERIALS (2024)

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Endurance Improvement of HfO $_{\text{2}}$ -Based FeFETs on FDSOI Platform by Al $_{\text{2}}$ O $_{\text{3}}$ Insertion Layer and Leakage-Awareness Recover (LAR) Strategies

Yuan Wang,Yuanquan Huang, Hongye Yuan,Bowen Nie,Shuxian Lv,Pengfei Jiang, Wei, Yang,Tiancheng Gong,Qing Luo

IEEE TRANSACTIONS ON ELECTRON DEVICES (2024)

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In-Depth Understanding of Nitridation-Induced Endurance Enhancement in FeFETs: Defect Properties and Dynamics Characterized by Nonradiative Multi-Phonon Model

Yuanquan Huang, Hongye Yuan,Tiancheng Gong,Yuan Wang,Pengfei Jiang, Wei, Yang,Junshuai Chai,Zhicheng Wu,Xiaolei Wang,Qing Luo

IEEE Transactions on Electron Devicespp.1-5, (2024)

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Silicon Atomic-Layer Doped Hf

$_{\text{0.7}}$

$_{\text{0.3}}$

$_{\text{2}}$

Films: Toward Low Coercive Field (0..

Lu Tai,Wei Wei,Pengpeng Sang,Xiaopeng Li,Xiaoyu Dou,Guoqing Zhao,Pengfei Jiang,Qing Luo,Xuepeng Zhan,Jixuan Wu,Jiezhi Chen

IEEE Transactions on Electron Devices（2024）

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Achieving High-Endurance Ferroelectricity in Hf0.5Zr0.5O2 Thin Films on Ge Substrate Through ZrO2 Interfacial Layer Induced Low-Temperature Annealing

Shuxian Lyu, Wei, Yang,Shengjie Zhao,Yuan Wang,Xiao Long,Pengfei Jiang,Tiancheng Gong,Yan Wang,Qing Luo

IEEE ELECTRON DEVICE LETTERSno. 3 (2024): 348-351

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