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个人简介
Prof. Lai's Ph.D. research at the University of Hong Kong was related to the design of small-sized MOS transistor with emphasis on narrow-channel effects. The work involved the development of both analytical and numerical models. Worked as a Post-doctoral fellow : i) proposed and implemented a novel self-aligned structure for bipolar transistor, ii) designed and implemented an advanced poly-emitter bipolar process with emphasis on self-alignment and trench isolation.
His current research interests are on thin gate dielectrics for Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) based on Si, SiC, GaN, Ge, organics, and on microsensors for detecting gases, heat, light, and flow.
His current research interests are on thin gate dielectrics for Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) based on Si, SiC, GaN, Ge, organics, and on microsensors for detecting gases, heat, light, and flow.
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JOURNAL OF VACUUM SCIENCE & TECHNOLOGY Bno. 6 (2023)
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PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS (2023)
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Semiconductor Science and Technologyno. 11 (2023): 115003-115003
2022 5th International Conference on Circuits, Systems and Simulation (ICCSS)pp.6-10, (2022)
AIP ADVANCESno. 11 (2022): 115004-115004-5
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