P. Srinivasan

Purushothaman Srinivasan (Senior Member, IEEE) received the Ph.D. degree from IMEC, Leuven, Belgium, and New Jersey Institute of Technology, Newark, NJ, USA. He is currently a Senior Member of Technical Staff (SMTS) working as a RF Reliability Team Leader for CMOS Si Technologies with GLOBALFOUNDRIES, Malta, NY, USA. He is currently focused on RF reliability in advanced CMOS nodes (45, 22, 14/12 nm nodes). He was also a GLOBALFOUNDRIES Assignee Member with IBM, Albany, until 2015. From 2007 to 2012, he was a Research Staff Member with Texas Instruments, Dallas, and was an Adjunct Professor with the MSE Department, University of Texas, Dallas, from 2010 to 2012. He holds IEEE membership for 15 years, has edited five books, holds 5 patents, ~10 invited talks authored and coauthored more than 100 international publications with over 800 citations. His research areas include high-k metal gate, SiGe-based transistors, negative bias temperature instability, low frequency (1/f) noise, and random telegraph signals. Since 2008, he has been an Executive Committee Member of Dielectric Science and Technology Division, Electrochemical Society. He has been serving the IRPS Transistor Sub-Committee since 2017 and served the Process Integration Sub-Committee in 2019. His conference publications include top tier conferences at IEDM and VLSI. He currently as a Reviewer for at least six journals, including the Journal of The Electrochemical Society, and IEEE Transactions on Electron Devices and IEEE Electron Device Letters.