Rosales-Quintero, P.

Pedro Rosales-Quintero was born in Puebla, Mexico, in 1967. He received the bachelor’s degree in electronics from the Meritorious Autonomous University of Puebla, Puebla, and the master’s and Ph.D. degrees from the National Institute of Astrophysics, Optics and Electronics, Puebla, in 1999 and 2005, respectively. He has published more than 50 articles in prestigious international journals. He has supervised three Ph.D. theses, eight master’s theses, and two bachelor’s theses. His main lines of research are physics, fabrication, characterization, and modeling of silicon semiconductor devices, as well as growth and characterization of amorphous, polymorphic, and nanostructured semiconductor materials of silicon, germanium, and carbon, and their application to thin-film transistors and solar cells.