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Bio
Pierre Etienne Allain was born in France in 1985. He received the B.Sc. degree in fundamental physics, the Magistère degree in fundamental physics, the M.S. degree in micro–nanotechnologies, and the Ph.D. degree in physics from the Université Paris-Sud, Orsay, France, in 2007, 2009, 2009, and 2012, respectively. He received the Ph.D. degree for his work at the Institut d'Electronique Fondamentale on the electrothermomechanical properties of top-down fabricated silicon nanowires.
He was a Graduate Research Assistant with the Laboratory of Solid State Physics (LPS), Orsay, working on Klein tunneling in graphene in 2008 and with The Hong Kong Polytechnic University, Kowloon, Hong Kong, working on a PVDF-based hydrodynamic force sensor in 2009. He is currently with the Institut d'Electronique Fondamentale, CNRS/Université Paris-Sud. His general research interests include high-precision metrology, N&MEMS development, and quantum effects on NEMS.
Research Interests
Papers共 29 篇Author StatisticsCo-AuthorSimilar Experts
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L. Schwab,P. E. Allain, N. Mauran, X. Dollat,L. Mazenq, D. Lagrange,M. Gély,S. Hentz,G. Jourdan,I. Favero,B. Legrand
arXiv (Cornell University) (2021)
Pierre Etienne Allain, Lucien Schwab, Colin Mismer,Marc Gely,Estelle Mairiaux,Maxime Hermouet,Benjamin Walter,Giuseppe Leo,Sebastien Hentz, Marc Faucher,Guillaume Jourdan,Bernard Legrand,
Instrumentation et Interdisciplinaritépp.307-314, (2020)
Instrumentation et Interdisciplinaritépp.291-300, (2020)
PHYSICAL REVIEW APPLIEDno. 2 (2020): 024079
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Author Statistics
#Papers: 28
#Citation: 517
H-Index: 10
G-Index: 22
Sociability: 5
Diversity: 0
Activity: 0
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