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个人简介
O. Noblanc received the degree in engineering from Ecole Nationale Supérieure de Chimie et de Physique de Bordeaux, Pessac, France, in 1990 and the Ph.D. degree in material science from Ecole Centrale Paris, Châtenay-Malabry, France, in 1994 for his work on the relationship between electromechanical and structural properties of ferroelectric ceramics.
In 1995, he joined the silicon carbide project at Thales Research and Technology (previously Thomson-CSF Corporate Research Laboratories). He was involved in device processing and characterization of MESFET for RF power application and Schottky rectifiers for power conversion. In 2000, he joined STMicroelectronices, Crolles, France, where he collaborated in the R&D process integration organization for CMOS technology development. In 2003, he started managing the analog and mixed signal activity in Crolles1. In 2006, he was appointed to manage the RF and analog R&D process integration organization before moving to Crolles2-Alliance to start the RF&AMS activity for advanced CMOS technologies.
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