基本信息
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Bio
Hidetoshi Nozaki was born in Niigata, Japan, in 1954. He received the B.S. and M.S. degrees in pure and applied science from the University of Tokyo, Tokyo, Japan, in 1978 and 1980, respectively.
He joined Toshiba Corporation, Tokyo, in April 1980, and now works at System LSI Division Toshiba Semiconductor Company. Since he joined Toshiba, he has been engaged in researching and developing the amorphous silicon (a-Si) solar cell and 2M-pixel CCD imager overlaid with an a-Si photoconversion layer. Currently, he is involved in the development of the CMOS image sensor.
Research Interests
Papers共 9 篇Author StatisticsCo-AuthorSimilar Experts
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S. Manabe, Y. Mastunaga,A. Furukawa,K. Yano,Y. Endo,R. Miyagawa,Y. Iida,Y. Egawa,H. Shibata,H. Nozaki, N. Sakuma,N. Harada
H. Yamashita,N. Sasaki,S. Ohsawa,R. Miyagawa,E. Ohba,K. Mabuchi,N. Nakamura, N. Tanaka,N. Endoh,I. Inoue,Y. Matsunaga,Y. Egawa,
N. Harada, Y. Endo,C. Tanuma,M. Iesaka,Y. Egawa,H. Nozaki,S. Uya,S. Sanada,A. Furukawa,S. Manabe,O. Yoshida
Photo-Electronic Image Devices - Proceedings of the Ninth SymposiumAdvances in Electronics and Electron Physicspp.157-164, (1988)
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