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个人简介
Norbert Moussy received the Ph.D. degree in superconductivity effects and very low temperature instrumentation in Grenoble. Since 2001, he has been working with CEA-LETI on process integration of innovative imager structures and materials, such as backside illumination technology and InGaAs integration in silicon processes. Since 2013, he has been in charge of the development of single photon avalanche diode for time of flight imaging and 3-D-stacking integration on advanced integrated circuit.
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