基本信息
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Bio
Nicholas G. Rudawski received the B.S.E. degree in materials science and engineering from the University of Michigan, Ann Arbor, MI, USA, in 2005, while researching growth and characterization of III–V semiconductors, and the Ph.D. degree in materials science and engineering from the University of Florida, Gainesville, FL, USA, in 2008, studying structure-processing-property relationships in ion-implanted Si.
Subsequently, he completed postdoctoral training in transmission electron microscopy of complex oxides and semiconductors with the University of California at Santa Barbara, Santa Barbara, CA, USA, before returning to the University of Florida for additional postdoctoral training in electrochemical studies of elemental semiconductors for Li ion battery applications. He joined the Herbert Wertheim College of Engineering, Gainesville, as a part of the Research Service Centers, in August 2012, where he primarily oversees the transmission electron microscopes and dual-beam scanning electron microscope/focused ion beams. He has authored or coauthored more than 50 peer-reviewed publications and contributed over 30 conference presentations since 2003.
Research Interests
Papers共 78 篇Author StatisticsCo-AuthorSimilar Experts
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Nature Electronicsno. 2 (2024): 147-156
Autumn S Dove, Dominika I Dzurny, Wren R Dees,Nan Qin, Carmen C Nunez Rodriguez, Lauren A Alt,Garrett L Ellward, Jacob A Best,Nicholas G Rudawski,Kotaro Fujii,Daniel M Czyż
arxiv(2023)
JOMno. 3 (2023): 1-10
Md Rubayat-E Tanjil,Tanuj Gupta,Matthew T. Gole, Keegan P. Suero,Zhewen Yin, Donald J. McCleeary,Ossie R. T. Douglas,Maegen M. Kincanon,Nicholas G. Rudawski, Alissa B. Anderson,Catherine J. Murphy,Huijuan Zhao,
PNAS NEXUSno. 8 (2023): pgad267-pgad267
Journal of vacuum science & technologyno. 6 (2022): 062403-062403
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