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Bio
Namhyun Lee (Member, IEEE) received the Ph.D. degree in electrical engineering from the Pohang University of Science and Technology, Pohang, South Korea, in 2012. He joined Samsung Electronics Company Ltd., South Korea, where he is currently a Principal Engineer. His current research interests include the modeling and characterization of MOSFET degradation in DRAM/NAND chip.
Research Interests
Papers共 25 篇Author StatisticsCo-AuthorSimilar Experts
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IEEE ACCESSno. 99 (2024): 23881-23886
IEEE ACCESS (2024): 10988-10994
IEEE Transactions on Electron Devicesno. 1 (2023): 48-52
2023 7TH IEEE ELECTRON DEVICES TECHNOLOGY & MANUFACTURING CONFERENCE, EDTMpp.1-3, (2023)
IEEE Transactions on Electron Devicesno. 12 (2023): 6313-6317
2022 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)pp.1-4, (2022)
Gang-Jun Kim, Moonjee Yoon, SungHwan Kim, Myeongkyu Eo,Shinhyung Kim, Taehun You,Namhyun Lee, Kijin Kim,Sangwoo Pae
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