基本信息
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Bio
Koji Nakayama was born in Osaka, Japan, in 1968. He received the B.E. and M.E. degrees from Osaka University, Osaka, in 1992 and 1994, respectively.
In April 1994, he joined The Kansai Electric Power Co., Inc., Amagasaki, Japan. From February 2000 to February 2003, he was a Senior Researcher with SiXON Ltd., where he conducted research on the SiC bulk and epitaxial growth. Since February 2003, he has been involved in the development of SiC power devices and high-power all SiC inverters with the Power Engineering R&D Center, The Kansai Electric Power Co., Inc., where he is currently a Senior Research Engineer.
Research Interests
Papers共 80 篇Author StatisticsCo-AuthorSimilar Experts
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MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING (2024): 108461
Materials science forum (2023): 145-149
2023 IEEE Applied Power Electronics Conference and Exposition (APEC)pp.187-193, (2023)
2021 23rd European Conference on Power Electronics and Applications (EPE'21 ECCE Europe)pp.1-7, (2021)
Wide Bandgap Semiconductors for Power Electronicspp.353-385, (2021)
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Author Statistics
#Papers: 78
#Citation: 845
H-Index: 20
G-Index: 26
Sociability: 5
Diversity: 0
Activity: 0
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