基本信息
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Bio
Matthew Metz was born in Wayne, NB, in 1973. He received the B.S. degree in chemistry from the University of Nebraska–Lincoln, in 1996, and the M.S. degree in chemistry and Ph.D. degree in inorganic chemistry from Northwestern University, Evanston, IL, in 1998 and 2002, respectively. His thesis concerned the development of co-catalysts for Ziegler–Natta olefin polymerization.
In 2002, he joined the Intel Corporation, Hillsboro, OR, where he is currently a Staff Process Engineer involved with gate dielectric films for future transistor generations. He has authored five papers. He holds two patents on high-$\kappa$/metal gate integration and nanotechnology applications.
Research Interests
Papers共 179 篇Author StatisticsCo-AuthorSimilar Experts
By YearBy Citation主题筛选期刊级别筛选合作者筛选合作机构筛选
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A. Penumatcha,K. P. O’Brien,K. Maxey, W. Mortelmans, R. Steinhardt, S. Dutta,C. J. Dorow, C. H. Naylor A., Kitamura Kitamura, T. Zhong,T. Tronic, P. Buragohain,
2023 International Electron Devices Meeting (IEDM)pp.1-4, (2023)
C. H. Naylor,Kirby Maxey,C. Jezewski,K. P. O'Brien, A. V. Penumatcha,M. S. Kavrik,B. Agrawal, C. V. Littlefield, J. Lux,B. Barley,Justin R. Weber,A. Sen Gupta,
VLSI Technology and Circuitspp.1-2, (2023)
C. J. Dorow,T. Schram,Q. Smets,K. P. O’Brien,K. Maxey, C.-C. Lin,L. Panarella,B. Kaczer,N. Arefin, A. Roy, R. Jordan,A. Oni,
2023 International Electron Devices Meeting (IEDM)pp.1-4, (2023)
Sou-Chi Chang,Kisung Chae,Mihaela I. Popovici,Chia-Ching Lin, Saima Siddiqui,I-Cheng Tung,Jasper Bizindavyi, Bernal Granados Alpizar,Nazila Haratipour,Matthew Metz,Jack Kavalieros,Gouri S. Kar,
C. J. Dorow,A. Penumatcha, A. Kitamura,C. Rogan,K. P. O'Brien,S. Lee,R. Ramamurthy, C-Y Cheng,K. Maxey, T. Zhong,T. Tronic,B. Holybee,
2022 INTERNATIONAL ELECTRON DEVICES MEETING, IEDMpp.7.5.1-7.5.4, (2022)
Nazila Haratipour,Sou-Chi Chang,Shriram Shivaraman,Christopher Neumann,Yu-Ching Liao, Bernal G. Alpizar,I-Cheng Tung,Hai Li,Vachan Kumar,Brian Doyle, Sarah Atanasov, Jason Peck,
2022 International Electron Devices Meeting (IEDM)pp.6.7.1-6.7.4, (2022)
M. Radosavljevic,C-Y Huang,W. Rachmady,S. H. Seung,N. K. Thomas,G. Dewey,A. Agrawal, K. Owens, C. C. Kuo, C. J. Jezewski,R. Nahm,N. Briggs,
2021 IEEE International Electron Devices Meeting (IEDM)pp.34.1.1-34.1.4, (2021)
S. -C. Chang,N. Haratipour,S. Shivaraman,C. Neumann, S. Atanasov,J. Peck,N. Kabir, I. -C. Tung, H. Liu,B. Krist,A. Oni,S. Sung,
2021 IEEE International Electron Devices Meeting (IEDM)pp.33.2.1-33.2.4, (2021)
Chelsey Dorow,Kevin O’Brien,Carl H. Naylor,Sudarat Lee,Ashish Penumatcha, Andy Hsiao,Tristan Tronic,Michael Christenson,Kirby Maxey, Hui Zhu,Adedapo Oni, Urusa Alaan,
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Author Statistics
#Papers: 178
#Citation: 9865
H-Index: 50
G-Index: 91
Sociability: 6
Diversity: 1
Activity: 4
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