Moongyu Jang

Moongyu Jang was born in Korea on October 18, 1968. He received the B.S. degree from Kyungpook National University, Daegu, Korea, in 1991 and the M.S. and Ph.D. degrees in physics from Korea Advanced Institute of Science and Technology (KAIST), Taejon, Korea, in 1993 and 1997, respectively. In 1997, he joined HYUNDAI Electronics, Inc., Ichon-Si, Korea (now HYNIX Semiconductor, Inc.), where he was involved in the process integration of MDL (Merged DRAM and Logic) devices. From 1997 to 1998, he was involved in the development of 0.35 $\mu$ m MDL technology. From 1999 to 2001, he was involved in the development of 0.18-$\mu$ m MDL technology. He is currently with Electronics and Telecommunications Research Institute (ETRI), Daejon, Korea, where he is involved in the basic research on nanoscale MOSFET devices. His research interests include processing and analysis of nanoscale MOSFETs, Schottky barrier MOSFETs (SB-MOSFETs) and mesoscopic quantum transport phenomena.