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个人简介
Mohammed Zaknoune received the Ph.D. degree from the Departement Hyperfrequences et Semiconducteurs, Institut d’Electronique de Microelectronique et de Nanotechnologie (IEMN), University of Lille, Lille, France.
He is currently a Senior Research Associate with the Centre National de Recherche Scientifique, Departement Hyperfrequences et Semiconducteurs, IEMN, University of Lille. His research interests were fabrication and characterization of GaInP$/$InGaAs pseudomorphic HEMT and AlInAs$/$InGaAs$/$InP HEMT on InP substrate and metamorphic on GaAs substrate for power applications. His main research interests include fabrication and characterization of heterojunction bipolar transistor InP$/$InGaAs and InP$/$GaAsSb on InP substrate for THz applications, InP$/$InGaAs uni-traveling carrier photodiodes for THz communications, and more recently, GaN Schottky diodes for power THz sources using frequency multiplication principle.
研究兴趣
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R. A. Peña,B. Orfao,I. Íñiguez-de-la-Torre, G. Paz, M. A. Daher,Y. Roelens,M. Zaknoune,J. Mateos,T. González,B. G. Vasallo, S. Pérez
IEEE Transactions on Electron Devicesno. 99 (2024): 1-0
2023 53RD EUROPEAN MICROWAVE CONFERENCE, EUMCpp.616-619, (2023)
2023 Asia-Pacific Microwave Conference (APMC)pp.327-329, (2023)
2023 ASIA-PACIFIC MICROWAVE CONFERENCE, APMCpp.327-329, (2023)
Micro and Nanostructures (2022): 107116
2022 OPTICAL FIBER COMMUNICATIONS CONFERENCE AND EXHIBITION (OFC)pp.1-3, (2022)
Conference on Lasers and Electro-Opticspp.1-2, (2022)
HAL (Le Centre pour la Communication Scientifique Directe) (2022)
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