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个人简介
Tohru Mogami (M'97-SM'09) received the B.S. degree in physics and the M.S. and Ph.D. degrees in electrical engineering from Tohoku University, Sendai, Japan, in 1980, 1982, and 1997, respectively.
In 1982, he was with the Microelectronics Research Laboratories, NEC Corporation, Kawasaki, Japan, where he was engaged in the research and development of very large scale integration (VLSI) processing and device technologies. From 1989 to 1990, he was a Visiting Researcher with Stanford University, USA. In 1990, he returned to NEC and managed the research and development of multiple-generation complementary metal–oxide–semiconductor technologies. In 2006, he went on loan to Selete Inc., Tsukuba, Japan, where he is currently the General Manager of the MIRAI Technology Project, including the variation control technologies of transistors, the development of carbon-nanotube and optical interconnects.
Dr. Mogami is a Fellow of Japan Society of Applied Physics and a member of the Institute of Electronics, Information, and Communication Engineers. He served as the Program Cochair, the Program Chair, the Symposium Cochair, and the Symposium Chair of the Symposium on VLSI Technology in 2006, 2007, 2008, and 2009, respectively.
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论文共 143 篇作者统计合作学者相似作者
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IEEE Journal of Selected Topics in Quantum Electronicsno. 4 (2018): 1-15
2018 International Conference on IC Design & Technology (ICICDT)pp.161-164, (2018)
ECS Transactionsno. 7 (2018): 17-25
https://doi.org/10.1117/12.2289253 (2018): 1053715
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作者统计
#Papers: 160
#Citation: 2588
H-Index: 26
G-Index: 42
Sociability: 6
Diversity: 2
Activity: 0
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