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Research Interests

Papers共 12 篇Author StatisticsCo-AuthorSimilar Experts

By YearBy Citation主题筛选期刊级别筛选合作者筛选合作机构筛选
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Improving and Modeling Forward Gate ESD Behaviors of p-GaN Power HEMTs by Hybrid Gate Technology
Yanfeng Ma, Sheng Li,Ran Ye,Denggui Wang,Weihao Lu,Mingfei Li, Lixi Wang,Chi Zhang, Jun Sun, Jiaxing Wei, Long Zhang,Siyang Liu,
IEEE Electron Device Lettersno. 99 (2024): 1-1
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Investigation on the Influences of Affinity Variations of p-NiOx in Ga203 Fin-HJFETs at High Temperatures
Mingfei Li, Sheng Li,Yanfeng Ma,Weihao Lu, Jie Ma,Ran Ye,Jiaxing Wei, Long Zhang, Siyang Liu, Weifeng Sun, Xinxin Yu, Rui Shen
2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)pp.220-223, (2024)
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Aging Reliability Compact Modeling of Trap Effects in Power GaN HEMTs
Yanfeng Ma,Sheng Li,Mengli Liu,Weihao Lu,Mingfei Li,Siyang Liu,Long Zhang,Jiaxing Wei,Lanlan Yang,Weifeng Sun, Jiaxin Sun
IEEE Transactions on Device and Materials Reliabilityno. 99 (2024): 1-1
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Improved Gate ESD Behaviors of p-GaN Power HEMTs by Hybrid Gate Technology
Yanfeng Ma, Sheng Li,Lixi Wang, Haoxiang Yang,Weihao Lu,Mingfei Li,Jie Ma,Ran Ye,Denggui Wang, Jianjun Zhou,Jiaxing Wei, Long Zhang,
2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)pp.1-4, (2024)
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