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Research Interests

Papers共 258 篇Author StatisticsCo-AuthorSimilar Experts

By YearBy Citation主题筛选期刊级别筛选合作者筛选合作机构筛选
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A novel SPICE model of shorted-anode lateral insulated-gate bipolar transistor
Yixun Jiang, Qingfeng Kong,Ming Qiao,Yin Guo, Yuxi Tang, Xinxin Liu,Sen Zhang,Bo Zhang
Microelectronics Journalpp.106268, (2024)
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Novel Bulk Homogenization Field Devices with Reducing Process Difficulty
Wentong Zhang, Lingying Wu, Hongbo Li,Ming Qiao,Nailong He,Sen Zhang,Zhaoji Li,Bo Zhang
IEEE Electron Device Lettersno. 99 (2024): 1-1
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A New Multi-Dimensional Depletion Concept of Homogenization Field Devices
Wentong Zhang, Jiamin He, Qiyi Wu,Nailong He,Sen Zhang,Ming Qiao,Zhaoji Li,Bo Zhang
IEEE Electron Device Lettersno. 10 (2023): 1708-1711
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Optimization of Reverse Recovery Characteristics Based on Termination Structure for 700V Super-Junction VDMOS
Yibing Wang,Ming Qiao, Jue Li,Ruidi Wang,Bo Zhang
2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD)pp.171-175, (2023)
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Total Ionizing Dose Hardness Analysis of Transistors in Radiation-Hardened 0.18μm BCD Technology
Rubin Xie, Bing Ding, Sheng Xu,Xin Zhou,Bo Zhang,Ming Qiao
2023 5th International Conference on Radiation Effects of Electronic Devices (ICREED)pp.1-4, (2023)
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A New Generation 700 V BCD Technology that Integrates Quadruple-RESURF LDMOS with Best-in-Class Specific On-Resistance
Ming Qiao,Dican Hou,Yue Gao,Dingxiang Ma, Jiawei Wang,Bo Zhang
2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD)pp.219-222, (2023)
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Total-Ionizing-Dose Radiation Effect on Dynamic Threshold Voltage in p-GaN Gate HEMTs
Xin Zhou, Zhao Wang,Zhonghua Wu,Qi Zhou,Ming Qiao,Zhaoji Li,Bo Zhang
IEEE TRANSACTIONS ON ELECTRON DEVICESno. 8 (2023): 4081-4086
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