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Research Interests

Papers共 125 篇Author StatisticsCo-AuthorSimilar Experts

By YearBy Citation主题筛选期刊级别筛选合作者筛选合作机构筛选
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On the experimental properties of the TS defect in 4H-SiC
Johannes A. F. Lehmeyer, Alexander D. Fuchs, Zhengming Li, Titus Bornträger, Fabio Candolfi, Maximilian Schober,Marcus Fischer, Martin Hartmann, Elke Neu,Michel Bockstedte,Michael Krieger,Heiko B. Weber
arxiv（2024）
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NOMAD CAMELS: Configurable Application for Measurements, Experiments and Laboratory Systems
Alexander D. Fuchs,Johannes A. F. Lehmeyer, Heinz Junkes,Heiko B. Weber,Michael Krieger
Journal of Open Source Softwareno. 95 (2024)
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Strain-Dependent Photoluminescence Line Shifts of the TS Color Center in 4H-SiС
Johannes Lehmeyer, Alexander Fuchs, Titus Bornträger,Matthias Popp,Heiko B. Weber,Michael Krieger
Defect and Diffusion Forum (2023): 17-21
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Impact of crystalline defects in 4H-SiC epitaxial layers on the electrical characteristics and blocking capability of SiC power devices
Elisabeth Kodolitsch, Vice Sodan,Michael Krieger,Heiko B Weber, Nikolaos Tsavdaris
Materials Research Expressno. 12 (2022)
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Measurement of the PtH defect depth profiles in fully processed silicon high-voltage diodes by improved current transient spectroscopy
Lena Bergmann,Gregor Pobegen, Daniel Schlögl,Holger Schulze,Heiko B. Weber,Michael Krieger
2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD)pp.221-224, (2022)
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