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Research interests
Wide bandgap microwave and high power field effect transistors. In particular gallium nitride based device operation, reliability and modelling.
Wide bandgap microwave and high power field effect transistors. In particular gallium nitride based device operation, reliability and modelling.
Research Interests
Papers共 366 篇Author StatisticsCo-AuthorSimilar Experts
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Journal of Applied Physicsno. 19 (2024)
Martin Kuball, Akhil Kumar Shaji,Stefano Dalcanale,Michael Uren,James Pomeroy,Matthew Smith, Justine Parke,Robert Howell
crossref(2024)
2023 53RD EUROPEAN MICROWAVE CONFERENCE, EUMCpp.38-41, (2023)
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IEEE Electron Device Lettersno. 12 (2023): 1943-1946
2023 IEEE International Reliability Physics Symposium (IRPS)pp.1-4, (2023)
IEEE Electron Device Lettersno. 11 (2023): 1821-1824
Applied Physics Expressno. 4 (2023): 044002-044002
2023 53rd European Microwave Conference (EuMC)pp.38-41, (2023)
IEEE ELECTRON DEVICE LETTERSno. 12 (2023): 1943-1946
APPLIED PHYSICS EXPRESSno. 4 (2023)
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