基本信息
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Bio
Michael Guillorn received the Ph.D. degree in materials science and engineering from The University of Tennessee, Knoxville, TN, USA, in 2003.
While working on his Ph.D. degree, he worked at the Oak Ridge National Laboratory, Oak Ridge, TN, USA, as a Technical Staff Member. Following the completion of his Ph.D. degree, he worked as a Research Associate at the Cornell Nanofabrication Facility, Ithaca, NY, USA. In 2006, he joined the IBM T. J. Watson Research Center, Yorktown Heights, NY, USA as a Research Staff Member to undertake research on high-density CMOS scaling. He served as the program manager and the technology lead for gate-all-around (GAA) and nanosheet device technology development from 2012 to 2016. This work culminated in the successful transition of this device technology from the research demonstration and pathfinding phase to 300-mm development. Since 2017, he has been actively engaged in the development of novel computer architecture solutions tailored to artificial intelligence workloads. He has authored over 100 publications in peer-reviewed journals and coauthored four book chapters. He holds over 150 issued U.S. patents.
Research Interests
Papers共 211 篇Author StatisticsCo-AuthorSimilar Experts
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Monodeep Kar,Joel Silberman,Swagath Venkataramani,Viji Srinivasan,Bruce M. Fleischer, Joshua Rubin, JohnDavid Lancaster,Sae Kyu Lee,Matthew Cohen,Matthew M. Ziegler,Nianzheng Cao, Sandra Woodward,
Proceedings of the IEEEno. 12 (2020): 2232-2250
Microlithographypp.1-40, (2020)
IEEE Solid-State Circuits Lettersno. 12 (2018): 217-220
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