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Masaru Sato (Member, IEEE) received the M.E. degree in electrical engineering from Tohoku University, Sendai, Japan, in 1999, and the Ph.D. degree in electronics and applied physics from the Tokyo Institute of Technology, Tokyo, Japan, in 2014.
He joined Fujitsu Laboratories Ltd., Atsugi, Japan, in 1999, where he has been engaged in research on high-speed InP-based high-electron mobility transistor (HEMT) circuits for fiber-optic communication systems and millimeter-wave integrated circuits. From 2009 to 2010, he was with the Georgia Institute of Technology, Atlanta, GA, USA, where he researched high-speed analog CMOS circuit. His current research interest includes the development of microwave and millimeter-wave monolithic microwave-integrated circuits (MMICs).
Dr. Sato was a recipient of the Young Researcher’s Award from IEICE in 2006.
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2024 IEEE RADIO AND WIRELESS SYMPOSIUM, RWSpp.122-125, (2024)
IEICE Trans. Electron.no. 10 (2023): 605-613
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IEEE Journal of the Electron Devices Society (2023): 101-106
IEEE Transactions on Components, Packaging and Manufacturing Technologyno. 11 (2021): 1909-1916
Michihiko Suhara, Masataka Nakanishi,Shintaro Kitakado,Junki Wakayama,Takumi Kimura, Kiyoto Asakawa,Masaru Sato,Tsuyoshi Takahashi,Kenichi Kawaguchi,Naoya Okamoto
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