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Malek Zegaoui received the M.S. and Ph.D. degrees in electrical engineering from the University of Lille, Lille, France, in 2001 and 2005, respectively.
He is a CNRS Senior Engineer Research with IRCICA/IEMN, Villeneuve d’Ascq, France. He is affiliated with the Department of Circuit and System. In 2010, he was recruited by the National French Research Center (CNRS) where he focused on design, processing, and characterization of new electronic GaN devices. Recently, he joined the THz Group (IEMN) for fabrication of THz photodiodes based on InP. Since 2015, he has been an Expert Member for HCERES (High Council for Evaluation of Research and Higher Education). He is Author or Co-Author of more than 41 scientific papers in international journals and conferences and four patents. His research interests include the processing and characterization of new electronic devices based on InP and wide bandgap semiconductors for millimeter-wave power amplification and low noise applications as well as for high power conversion.
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2023 Asia-Pacific Microwave Conference (APMC)pp.327-329, (2023)
2023 ASIA-PACIFIC MICROWAVE CONFERENCE, APMCpp.327-329, (2023)
Micro and Nanostructures (2022): 107116
2022 OPTICAL FIBER COMMUNICATIONS CONFERENCE AND EXHIBITION (OFC)pp.1-3, (2022)
HAL (Le Centre pour la Communication Scientifique Directe) (2022)
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HAL (Le Centre pour la Communication Scientifique Directe) (2022)
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2022 IEEE International Topical Meeting on Microwave Photonics (MWP)pp.1-2, (2022)
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