Mohammed Zaknoune

Mohammed Zaknoune received the Ph.D. degree from the Departement Hyperfrequences et Semiconducteurs, Institut d’Electronique de Microelectronique et de Nanotechnologie (IEMN), University of Lille, Lille, France. He is currently a Senior Research Associate with the Centre National de Recherche Scientifique, Departement Hyperfrequences et Semiconducteurs, IEMN, University of Lille. His research interests were fabrication and characterization of GaInP$/$InGaAs pseudomorphic HEMT and AlInAs$/$InGaAs$/$InP HEMT on InP substrate and metamorphic on GaAs substrate for power applications. His main research interests include fabrication and characterization of heterojunction bipolar transistor InP$/$InGaAs and InP$/$GaAsSb on InP substrate for THz applications, InP$/$InGaAs uni-traveling carrier photodiodes for THz communications, and more recently, GaN Schottky diodes for power THz sources using frequency multiplication principle.