基本信息
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Bio
Michael W. Geis received the B.A. degree in physics, the M.S. degree in electrical engineering in 1970, and the Ph.D. degree in space physics and astronomy in 1976 from Rice University, Houston, TX.
During his graduate work, he studied atomic and molecular physics with emphasis on charge exchange reactions. From 1976 to 1978, he was a Postdoctoral Student in the Chemistry Department, Rice University, where he was engaged in laser-driven chemical reactions between molecular beams. In 1978, he joined the Submicrometer Technology Group, Lincoln Laboratory, Massachusetts Institute of Technology (MIT), Cambridge. He has been involved with semiconductor-on-insulator technology using zone-melting recrystallization, submicrometer structure fabrication, dry etching with reactive ion etching and ion-beam-assisted etching, diamond growth and devices. He has authored or coauthored more than 100 journal papers. He is currently engaged in developing cold cathodes, signal processing using optics, and liquid crystal optical shutters.
Research Interests
Papers共 164 篇Author StatisticsCo-AuthorSimilar Experts
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MRS Online Proceedings Libraryno. 1 (2011): 567-570
mag(2010)
Cited24Views0Bibtex
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semanticscholar(2010)
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Proceedings of SPIE-The International Society for Optical Engineering (2009)
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Author Statistics
#Papers: 172
#Citation: 8835
H-Index: 47
G-Index: 87
Sociability: 6
Diversity: 0
Activity: 0
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