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个人简介
Marina Tosi was born in Verona, Italy, in 1955. She received the Laurea degree in physics from the University of Padova, Italy, in 1978.
She joined STMicroelectronics in 1979 working in the Central R&D group on MOS transistors. Since 1987, she has been working in memories, EPROM, and FLASH, with particular interest in reliability. Since 2001, she has been working with the Non-Volatile Memory Process Development Group on the process architecture and electrical characterization of phase-change nonvolatile memory cells.
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european solid state circuits conferencepp.293-296, (2004)
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