Yang, M.T.

Ming-Ta Yang (S'93–M'96) was born in Tainan, Taiwan, in 1966. He received the B.S. and M.S. degrees in physics and applied physics from Chung-Yuan University, Chung-Li, Taiwan, in 1989 and 1992, respectively, and the Ph.D. degree in electrical engineering from National Central University, Chung-Li, Taiwan, in 1995. His doctoral dissertation concerned the characterization and model of AlGaAs/InGaAs doped-channel heterostructure field-effect transistors (FETs) and its application in monolithic microwave integrated circuits (MMICs). During the 1989 academic year, he joined the Department of Physics, Chung-Yuan University, as a faculty member. In 1995, he joined Mosel Vitelic Inc., Hsinchu, Taiwan, where he was involved with very large scale integration (VLSI) advanced technology development. In 1998, he joined the Taiwan Semiconductor Manufacture Company Ltd. (TSMC), Hsinchu, Taiwan, where he set up a high-frequency characterization laboratory and organized a team to response for the development of characterization and MS/RF Spice model in RF CMOS and high-speed SiGe HBT BiCMOS technologies. In 2007, he was with the Product Service Division, TSMC, where he was responsible for the mainstream advanced RF technology deployment, test-vehicle implementation, MS/RF characterization, and Si correlation. He is currently with the Spice Modeling Department, TSMC. He has authored or coauthored over 40 technical papers in international journals and conferences in the area of RF device characterization and modeling, which covering the fields of III–V AlGaAs/InGaAs HEMT, Si/SiGe BiCMOS, and mostly in RF CMOS. Dr. Yang served on the advisory Workshop Committees of Compact Modeling for RF/Microwave Applications (CMRF) from 2004 to 2007 and as a committee member on Device and Modeling of the SiRF in 2007 and 2008.