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排名必读论文期刊顶会热点AI 简史溯源树小脉星探人才迁徙塔尖人才国防情报追踪开源工具智慧手语
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论文共 15 篇作者统计合作学者相似作者

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First Experimental Demonstration of Negative Capacitance InGaAs MOSFETs With Hf0.5Zr0.5O2 Ferroelectric Gate Stack
Q. H. Luc, C. C. Fan-Chiang, S. H. Huynh,P. Huang,H. B. Do,M. T. H. Ha,Y. D. Jin,T. A. Nguyen, K. Y. Zhang,H. C. Wang, Y. K. Lin, Y. C. Lin,
2018 IEEE SYMPOSIUM ON VLSI TECHNOLOGYpp.47-48, (2018)
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Gate-All-Around In0.53Ga0.47As MOSFETs with Ion=3.3mA/µm (Vgs-Vth=Vds=1V) and gm=3.56 mS/µm (Vds=0.5V) using Plasma-Enhanced Atomic Layer Deposition Technique
Y.D. Jin,H.Q. Luc,W.J. Lin, S.K. Yang, Y.K. Zhang,B.H. Do,H.S. Huynh,H.M.T. Ha, P. Huang,W.C. Hsu,C.Y. Lin, E.Y. Chang
Extended Abstracts of the 2018 International Conference on Solid State Devices and Materials (2018)
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Materials growth and band offset parameters of the Al 2 O 3 /In 0.28 Ga 0.72 Sb/AlSb/GaSb/GaAs heterostructure
S.H. Huynh,M.T.H. Ha,H.B. Do,T.A. Nguyen,Y.D. Jin,J.W. Lin, K.S. Yang, C.-C.F. Chang,Q.H. Luc, E.Y. Chang
Extended Abstracts of the 2017 International Conference on Solid State Devices and Materials (2017)
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Investigation of the Interface Stability of the Metal/HfO 2 /AlN/InGaAs MOS Devices
H. Binh Do,Q.H. Luc,M.T.H. Ha,S.H. Huynh,T.A. Nguyen,J.W. Lin, K.S. Yang, C.-C.F. Chiang,Y.-D. Jin,Y.C. Lin, E.Y. Chang
Extended Abstracts of the 2017 International Conference on Solid State Devices and Materials (2017)
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Improved Performance and Sufficient Reliability In 0.53 Ga 0.47 As FinFET Using NH3 Plasma Treatment
K.S. Yang,Q.-H. Luc,C.C. Chang,J.W. Lin, C.-C.F. Chiang,H.B. Do,M.T.H. Ha,S.H. Huynh,Y.D. Jin,T.A. Nguyen,Y.-C. Lin, E.Y. Chang
Extended Abstracts of the 2017 International Conference on Solid State Devices and Materials (2017)
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Enhancing the Performance of Ni-In0.53Ga0.47As MOSFETs Using Post Silicon Dopant Process
H.Q. Luc,W.J. Lin, S.K. Yang, C.C. Chang, C.-C.C. Fan,B.H. Do,M.T.H. Ha,H.S. Huynh,D.Y. Jin,A.T. Nguyen,C.Y. Lin, E.Y. Chang
Extended Abstracts of the 2017 International Conference on Solid State Devices and Materials (2017)
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Improved Performance and Sufficient Reliability In<sub>0.53</sub>Ga<sub>0.47</sub>As FinFET Using NH3 Plasma Treatment
K.S. Yang,Q.-H. Luc,C.C. Chang,J.W. Lin, C.-C.F. Chiang,H.B. Do,M.T.H. Ha, S.H. Huynh,Y.D. Jin,T.A. Nguyen,Y.-C. Lin, E.Y. Chang
Extended Abstracts of the 2017 International Conference on Solid State Devices and Materials (2017)
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Materials growth and band offset parameters of the Al<sub>2</sub>O<sub>3</sub>/In<sub>0.28</sub>Ga<sub>0.72</sub>Sb/AlSb/GaSb/GaAs heterostructure
S.H. Huynh,M.T.H. Ha,H.B. Do,T.A. Nguyen,Y.D. Jin,J.W. Lin, K.S. Yang, C.-C.F. Chang,Q.H. Luc, E.Y. Chang
Extended Abstracts of the 2017 International Conference on Solid State Devices and Materials (2017)
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