基本信息
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Bio
Masatoshi Hasegawa was born in Shiga, Japan, on November 10, 1966. He received the B.S. and M.S. degrees in electrical engineering from Nagoya University, Nagoya, Japan, in 1989 and 1991, respectively.
He joined the Device Development Center, Hitachi Ltd., Tokyo, Japan, in 1991. He has been engaged in the design of high density DRAM and high-speed embedded DRAM.
Research Interests
Papers共 131 篇Author StatisticsCo-AuthorSimilar Experts
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Shigemi Yoshihara,Hironobu Fukuda,M. Tamura,Osamu Arisaka,Masanori Ikeda,Norimasa Fukuda, T. Tsuji, S. Hasegawa,N. Kanno, M. Teraoka,H. Wakiguchi,Y. Aoki,
2016 IEEE INTERNATIONAL SOLID-STATE CIRCUITS CONFERENCE (ISSCC) (2016): 60-+
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2015 IEEE INTERNATIONAL SOLID-STATE CIRCUITS CONFERENCE DIGEST OF TECHNICAL PAPERS (ISSCC) (2015): 54-U67
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Journal of Japan Society of Civil Engineersno. 6 (2015)
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