M. Gros-Jean - stmicroelectronics | 人才画像

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Ferroelectric HfO2 for Memory Applications: Impact of Si Doping Technique and Bias Pulse Engineering on Switching Performance

T. Francois,J. Coignus,L. Grenouillet,J.P. Barnes,N. Vaxelaire, J. Ferrand, I. Bottala-Gambetta,M. Gros-Jean, S. Jeannot, P. Boivin,P. Chiquet,M. Bocquet,

2019 IEEE 11TH INTERNATIONAL MEMORY WORKSHOP (IMW 2019)（2019）

引用4浏览0EIWOS引用

Investigation Of Point Defects In Hfo2 Using Positron Annihilation Spectroscopy: Internal Electric Fields Impact

M. Alemany,A. Chabli, E. Oudot, F. Pierre,P. Desgardin,F. Bertin,M. Gros-Jean,M. F. Barthe

14TH INTERNATIONAL WORKSHOP ON SLOW POSITRON BEAM TECHNIQUES & APPLICATIONSno. 1 (2017): 012019

引用2浏览0引用

New Insight On High-K/Metal Gate Reliability Modeling For Providing Guidelines For Process Development

M Rafik,G Ribes,P Mora,Serge Blonkowski,X Federspiel, P Caubet, C Gaumer,M Grosjean,Didier Roy

2013 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS)（2013）

引用1浏览0EIWOS引用

Impact of bilayer character on High K gate stack dielectrics breakdown obtained by conductive atomic force microscopy

R. Foissac,S. Blonkowski,M. Kogelschatz,P. Delcroix,M. Gros-Jean,F. Bassani

Microelectronics Reliability（2013）

引用10浏览0EI引用

Impact Of High Temperature Annealing On La Diffusion And Flatband Voltage (V-Fb) Modulation In Tin/Laox/Hfsion/Sion/Si Gate Stacks

R Boujamaa,S Baudot,Nevine Rochat,R Pantel,E Martinez,O Renault,B Detlefs,J Zegenhagen,V Loup,F Martin,M Grosjean,F Bertin,

JOURNAL OF APPLIED PHYSICS（2012）

引用25浏览0引用

Evaluation And Modeling Of Lanthanum Diffusion In Tin/La2o3/Hfsion/Sio2/Si High-K Stacks

Z Essa,C Gaumer,A Pakfar,M Grosjean,M Juhel,F Panciera,P Boulenc,Clement Tavernier,F Cristiano

APPLIED PHYSICS LETTERS（2012）

引用15浏览0引用

Impact of the TiN electrode deposition on the HfO2 band gap for advanced MOSFET gate stacks

C. Gaumer,E. Martinez,S. Lhostis,M. -J. Guittet,M. Gros-Jean,J. -P. Barnes,C. Licitra,N. Rochat,N. Barrett,F. Bertin,A. Chabli

Microelectronic Engineeringno. 1 (2011): 72-75

引用14浏览0EI引用

Flatband Voltage Tuning of HfSiON-based Gate Stacks: Impact of High Temperature Activation Annealing and LaOx Capping Layers

R. Boujamaa,S. Baudot,E. Martinez, O. Renault,B. Detlefs,J. Zegenhagen,V. Loup,F. Martin,M. Gros-Jean,F. Bertin,C. Dubourdieu

ECS Transactionsno. 4.0 (2011): 805-813

引用24浏览0引用

Plasma Enhanced Atomic Layer Deposition of ZrO2: A Thermodynamic Approach

E. Blanquet, D. Monnier, I. Nuta,F. Volpi, B. Doisneau, S. Coindeau,J. Roy,B. Detlefs, Y. Mi,J. ZegenHagen, C. Martinet, C. Wyon,

ECS Transactions（2011）

引用2浏览0引用

PEALD ZrO2 Films Deposition on TiN and Si Substrates

D. Monnier,M. Gros-Jean, E. Deloffre, B. Doisneau, S. Coindeau,A. Crisci,J. Roy, Y. Mi,B. Detlefs,J. Zegenhagen, C. Wyon, C. Martinet,

ECS Transactionsno. 8 (2009): 235-241

引用5浏览0引用

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