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Bio
Mohamed Elattar (Member, IEEE) received the B.Sc. degree in electronics engineering in 2015 from the German University in Cairo, Cairo, Egypt, in 2015, and the M.Sc. degree in communications circuits and systems from Ulm University, Ulm, Germany, in 2017. In 2015, he was with the Institut für Mikroelektronik Stuttgart, Stuttgart, Germany, and from 2016 to 2017, he was with Philips Photonics GmbH, Ulm, as an Intern with the R&D Department. His M.Sc. thesis and internship dealt with vertical-cavity surface-emitting lasers. In 2018, he joined the Ferdinand-Braun-Institut gGmbH, Leibniz-Institut für Höchstfrequenztechnik, Berlin, Germany, as a Doctoral Candidate. His research focuses on enhancing the efficiency and beam quality of high-power broad-area diode lasers.
Research Interests
Papers共 16 篇Author StatisticsCo-AuthorSimilar Experts
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IEEE Journal of Selected Topics in Quantum Electronicsno. 99 (2024): 1-7
M. J. Miah, D. Martin,A. Ginolas,M. Elattar,P. Della Casa, S. Gruetzner, S. Strohmaier,A. Knigge,G. Traenkle,P. Crump
2023 IEEE PHOTONICS CONFERENCE, IPCpp.1-2, (2023)
PHYSICA SCRIPTAno. 1 (2023)
2022 28th International Semiconductor Laser Conference (ISLC)pp.1-2, (2022)
HIGH-POWER DIODE LASER TECHNOLOGY XX (2022)
2022 28th International Semiconductor Laser Conference (ISLC)pp.1-2, (2022)
Conference on Lasers and Electro-Opticspp.1-2, (2022)
Novel In-Plane Semiconductor Lasers XX (2021): 45-52
Novel In-Plane Semiconductor Lasers XX (2021): 32-44
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